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For most thin film structures, by changing the wavelength range to fit ellipsometric spectra, the values of the fitted parameters also change to a certain extent. The reason is that compared with the ellipsometric sensitivity many thin films are vertically non-uniform. In absorbing films with significant dispersion in the used wavelength range, the penetration depth of probing light can show large...
Single-crystalline silicon wafers covered with sacrificial oxide layer and epitaxially grown gallium nitride layers were implanted with high-fluence helium ions (2–6×1016cm−2) at energies of 20–30keV. Thermal annealings at 650–1000°C, 1h were performed on the Si samples and rapid thermal annealings at 600–1000°C, 120s under N2 were performed on the GaN samples. The as-implanted samples and the near-surface...
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