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The oxidation of a 2.7-nm-thick layer of Si formed on a layer of Si 0.7 Ge 0.3 using atomic oxygen at 400°C was studied with the aid of angle-resolved X-ray photoelectron spectroscopy and high-resolution Rutherford backscattering spectroscopy. Analysis of the measurement results revealed that: (1) an appreciable number of Ge atoms diffused into the Si layer during the formation of...
Almost fully relaxed thin SiGe buffer layers are obtained by Ar ion implantation into Si substrates before SiGe molecular beam epitaxy (MBE) growth. The strain relaxation ratio of the 100nm thick Si 0.65 Ge 0.35 layer grown on ion implanted Si substrate is about 95%, while it is only 60% in the unimplanted case. Surface morphology of the buffer layer on...
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