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A near white GaN-based multiple quantum well (MQW) light emitting diode (LED) was grown by metal–organic chemical vapor deposition on top of a 20-period GaN/Al z Ga 1−z N distributed Bragg reflector (DBR). Photoluminescence, electroluminescence and high resolution X-ray diffraction were performed to analyze the sample characteristics. The results show that the introduction of the DBR...
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