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We report back gate field-effect transistors (FETs) with few-layered MoS2 nanosheet controlled by lead-zirconate-titanate (PZT) ferroelectric gating. The MoS2 transistors with PZT gating (MoS2-PZT FETs) exhibit reproducible hysteresis and nonvolatile memory behaviors with high stability, which can be attributed to the polarization screening from interface adsorbates and charge dynamic trapping/detrapping...
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