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The dielectric behavior of sol–gel derived Ba 0.80 Sr 0.20 (Zr x Ti 1−x )O 3 (0.0≤x≤0.50) thin films is studied. A relaxor behavior is observed for x≥0.35. The degree of relaxation increases with Zr content. The frequency dependence of the polar regions follows Vogel–Fulcher relation with a characteristic cooperative freezing at freezing temperature (T f...
Barium zirconium titanate thin films are attractive candidates for dynamic random access memories and tunable microwave devices. In the present work, a wide range of Zr-doped BaTiO 3 thin films has been prepared by sol-gel technique. X-ray diffraction and micro-Raman scattering studies confirmed the structural phases in the powder and films of BZT and various structural transitions of BaTiO...
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