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A detailed characterisation study of GaN thin films grown by rf-plasma molecular beam epitaxy on intermediate-temperature buffer layers (ITBL) was carried out with Hall, photoluminescence (PL) and deep-level transient Fourier spectroscopy (DLTFS) techniques. The unique feature of our GaN thin films is that the GaN epitaxial layers are grown on top of a double layer that consists of an ITBL, which...
High-mobility GaN thin films were grown by RF plasma-assisted molecular beam epitaxy on (0001) sapphire. A conventional low-temperature buffer layer and an intermediate-temperature buffer layer (ITBL) were first deposited before the growth of the epitaxial layer. Electron mobility is found to vary strongly with the ITBL thickness with value as high as 460cm 2 V -1 s - ...
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