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An integrated waveguide realized on (high resistivity) silicon using an IC-compatible process is reported in this work. The manufacturing process flow is based on substrate transfer technique and KOH etching, giving the resulting waveguide a trapezoidal cross-section. For this structure, the analysis of the propagating modes described here shows that it is possible to define a TE10-like mode, whose...
In this letter, we report, for the first time, a silicon-filled integrated waveguide based on a two mask integrated circuit (IC) process and substrate transfer technique. The fabrication process offers a high degree of control and repeatability on the device geometrical dimensions. Waveguide structures with cutoff frequencies of 35, 50, and 77 GHz were designed and fabricated. In the fundamental TE...
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