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The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2V, specific-on-resistance of 15.1mΩcm2 and a reverse leakage current of −0.14mA/cm2 at −10V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310nm (4.0eV). In addition, GaN...
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