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The radiation tolerance of electronic devices and circuits is of interest for space and some other harsh environment applications. Properly designed deep submicron gate length Si MOSFETs can have small threshold voltage shift and leakage increase for doses of 100 kGy (10 Mrad) or even larger, however polysilicon thin film transistors (TFTs) show significant changes at much lower dose (<; 1 kGy)...
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