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In this letter, investigations of impacts of back bias stressing on extremely thin SoI MOSFETs with channel thickness varying from 11 to 4 nm are presented. For a given gate length , with back bias stressing from to 20 V, drain-induced barrier lowering (DIBL) with small values are obtained due to increment of carrier confinement toward the top gate for pMOSFET. While with enlargement...
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