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The two dimension distributions of dislocation and thermal stress of 3‐inch diameter stoichiometric and P‐rich InP wafers are investigated, and an analysis of the relation between the two distributions is given. As a result, in stoichiometric and P‐rich InP wafers, both the dislocation and thermal stress distributions are found to be circular ring shape, and where the thermal stress is stronger, the...
We studied the effect of HCl, H3PO4, HBr etchants, temperature, illumination on the display of dislocation pits on <100> InP single crystal wafers, and analyzed the effect of illumination, using the wet chemical etching method. The experimental results show that the etching rate is strongly dependent on the proportion of HBr in the mixed etchant and HBr alone can reveal dislocation pits on <100>...
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