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The integration of direct bandgap III-V semiconductors on Si substrate can enable efficient light emitters, and many applications that need light sources would be benefited, such as lighting, display, photonic integrated circuits (PICs), and on-chip optical communications. AlGaInP that is lattice-matched to GaAs is an efficient light emitting material which emits red to yellow-green light, depending...
Network virtualization, as a fundamental technology of Future Internet Architecture, has been used to overcome the ossification of the current Internet. This paper focuses on virtual nodes splitting for aggregating the diverse physical resources in the issue of virtual network embedding (VNE), which is used for the resource allocation in network virtualization. A mixed integer programming (MIP) problem...
In this paper a Pt Archimedean-spiral interdigitated microelectrode with containing trenches was put forward, fabricated and characterized. Pt film with thickness 300nm was deposited by radio frequency (RF) magnetron sputtering on a Ti deposited n(100) Si substrate. On this Pt coated Si substrate a passivation layer of Si3N4 film with thickness 350nm was coated by plasma-enhanced chemi-cal deposition...
The electrochemical oxidation of atrazine on Ti/SnO2-Sb2O5/PbO2 electrode was studied by cyclic voltammetry in this paper. The electrochemical behaviour of the electrode in sodium sulfate solution and in the mixture solution of sodium sulfate and atrazine has been studied. The experimental results of cyclic voltammetry showed that acidic media was suitable for efficient electrochemical oxidation of...
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