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Current and charge signals have been collected for Se ions at 408MeV, S at 160MeV and Ni at 703MeV, all stopped in silicon detectors. Some detectors were cut 0∘ off the 〈111〉 axis and some off the 〈100〉 axis. Important effects on the shape of the silicon current and charge signals have been observed, depending on the orientation of the impinging ion relative to the crystal axes and planes.A degradation...
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