The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report on 2D simulations of dark current for InP/InGaAs/InP p-i-n photodiode by Sentaurus DEVICE. Our simulation result is in good agreement with experiment indicating that generation-recombination is the dominant source of dark current at low bias. Effects of absorption layer thicknesses and doping concentrations on dark current are investigated in detail.
In order to better understand the differences between lasers with GaAs and GaAsN barriers, this paper has experimentally compared their basic performance characteristics, including threshold currents and spectral gain characteristics. The laser with GaAsN barriers has a reduced N-content in the quantum well to achieve almost identical emission wavelengths. Otherwise the laser structures are the same...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.