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AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200degC, 400degC and 600degC post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown...
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