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Titanium nitride (TiN) films were deposited onto silicon wafers using an ion beam assisted deposition (IBAD) method with an electron cyclotron resonance (ECR) ion source for ionizing the nitrogen (N 2 ) gas under a condition of high nitrogen ion to titanium neutral ratio. The deposition rate of the TiN films was strongly dependent on the evaporation rate, d Ti , of Ti metal and decreased...
Gallium arsenide wafers were encapsulated with multilayer films consisting of TiN and Ti layers using an ion beam-assisted deposition technique employing an electron beam evaporator for Ti evaporation and a microwave ion source for ionizing nitrogen gas. The encapsulated GaAs surfaces were heated to 1000 o C and held at that temperature for 15 min. The GaAs surfaces had a desirable surface...
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