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The transformation of Co/Si to CoSi 2 /Si in the temperature range of 300–1170K has been investigated using depth-resolved positron annihilation and Glancing incidence X-ray diffraction (GIXRD). The different silicide phases formed are identified from the experimental positron annihilation characteristics, which are consistent with the GIXRD results. The present study clearly indicates the...
Positron beam and Raman spectroscopic studies are reported on a Ge/CeO 2 thin film system grown on a Si substrate. The variation of the Doppler line shape S-parameter, as a function of positron beam energy, shows a pronounced maximum corresponding to the Ge-region of as-grown film, while no equivalent feature is seen in the sample annealed at 773 K. The Raman spectrum of the as-grown film...
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