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Silicide formation in Co/Si thin structures synthesized using thermal evaporation, sputter deposition and ion implantation, has been investigated using depth-resolved positron annihilation spectroscopy (PAS) together with other corroborative experimental techniques. S vs. E p curves and S–W correlation plots have revealed important processes such as defect annealing, interdiffusion, silicide...
The transformation of Co/Si to CoSi 2 /Si in the temperature range of 300–1170K has been investigated using depth-resolved positron annihilation and Glancing incidence X-ray diffraction (GIXRD). The different silicide phases formed are identified from the experimental positron annihilation characteristics, which are consistent with the GIXRD results. The present study clearly indicates the...
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