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TiN diffusion barrier layers were deposited on SiO2/Si substrate by ALD method that employed TiCl4 and NH3 as the source and reactant gases, respectively, at a temperature range between 350°C and 500°C. Properties of films, including deposition rate, resistivity, surface roughness and chemical composition, were investigated, and performance of TiN diffusion barrier layer was also verified. Deposition...
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