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Low-temperature Cu/Sn/Cu solid-state-diffusion (SSD) bonding has been investigated in this paper. Twenty-micrometer fine-pitch bumps with daisy-chain and Kelvin structures were fabricated by high-efficiency and low-cost electroplating process. Before bonding, the bump surface was treated with Ar(5% H2) plasma. Wafer-level bonding was performed with a pressure of 6.7 MPa at 200 °C for 60 min. Microstructure...
In this paper, wafer level room temperature ultrafine pitch Cu-Cu direct bonding was accomplished followed by annealing process at the temperature of 300 °C for 30 min. Cu pad pitches of 15μm, 20μm and 25μm with different pad size of 2μm, 3μm and 4μm were designed and fabricated on 300mm wafers. Additionally, Cu pad pitch of 6μm, 7μm, 8μm with Cu pad size of 3μm was also designed on the wafer by considering...
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