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In the present paper, performance analysis of a resonant-cavity-enhanced Si/Si1-yGey/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active Si1-yGey layers and carrier trapping by the potential barriers at the heterointerfaces of Si/Si1-yGey/Si quantum wells on the bandwidth (BW) and responsivity of the detector have been investigated using numerical...
In the present paper, noise analysis of a resonant-cavity-enhanced Si/SiGe/Si p-i-n multiple quantum well photodetector has been carried out considering the effects of material parameters of SiGe and carrier trapping at heterointerfaces. Effect of Ge-content and applied bias on the signal to noise ratio have been investigated using numerical simulation.
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