The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The fabrication of a 20 nm strained-Si on a 360 nm relaxed-SiGe layer structure using SIMOX technology was successfully demonstrated for the first time. The thin relaxed-SiGe layer on SiO2 was obtained by the direct implantation of oxygen into the thick SiGe layer, and by annealing. It was found that hydrogen termination produced by HF treatment allows successful regrowth of strained-Si layer on the...
Changes in the surface composition of GaN films by p- and n-type doping were studied using both Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It was found that the surface composition of the GaN films was affected by impurity doping, i.e. the surface of the p-type GaN film was enriched with gallium and that of the n-type GaN film with nitrogen, compared with that of...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.