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The PbTe films were grown on hydrogen-terminated Si(111) [H-Si(111)] substrate by the hot wall epitaxy method. These films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and I-U measurement. The XRD spectrum revealed that PbTe films grown on H-Si(111) substrate have a preferred <100> orientation. XRD and SEM analyses showed that their crystalline quality is better...
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