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Solid-phase growth of the [a-Si/a-FeSiGe] n (n: 1, 2, 4; total thickness: 500nm) stacked structure has been investigated. After annealing at 700 o C, the [a-SiGe/β-FeSi 2 (Ge)] n stacked structures were formed. From the analysis of the X-ray diffraction spectra, it was found that β-FeSi 2 (Ge) was strained by 0.4-0.5% for n = 1. With increasing n, the strains...
Growth of SiGe/β-FeSi 2 superstructures by annealing of a-Si/a-FeSiGe layered structures was investigated for control of the strains in β-FeSi 2 by Ge doping. The [a-SiGe/β-FeSi 2 (Ge)] n multi-layered structures were formed after annealing at 700 o C. From the analysis of the X-ray diffraction (XRD) spectra, it was found that β-FeSi 2 (Ge) was strained...
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