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We report a single-step procedure for growth of ohmic Ti3SiC2 on 4H-SiC by sputter-deposition of Ti at 960°C, based on the Ti–SiC solid-state reaction during deposition. X-ray diffraction and electron microscopy show the growth of interfacial Ti3SiC2. The as-deposited contacts are ohmic, in contrast to multistep processes with deposition followed by rapid thermal annealing. This procedure also offers...
Epitaxial predominantly phase-pure Ti 7 Si 2 C 5 thin films were grown onto Al 2 O 3 (0001) by reactive magnetron sputtering. The c-axis lattice constant is ∼60.2Å; the Ti 7 Si 2 C 5 unit cell comprises alternating Ti 3 SiC 2 -like and Ti 4 SiC 3 -like half-unit-cell stacking repeated three times. Elastic...
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