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Lead halide perovskite semiconductors have recently gained interest for their application in a wide range of different optoelectronic devices, demonstrating impressive performances in solid-state photovoltaic devices [1] with impressive efficiencies exceeding 20% and great potential for lighting and lasing application [2,3]. These materials not only show exceptional primary optoelectronic properties...
Manipulation of perovskite crystallinity in order to obtain the desired optoelectronic properties is a critical issue. Perovskite structural characterization has been carried out applying several tools, which usually interrogate bulky portions of the material, averaging out over the inhomogeneities at the sub-micron scale [1]. Preliminary results obtained through photoluminescence microscopy across...
Silicon nitride (Si3N4) waveguide platforms [1,2] are interesting candidates for optical interconnects and sensing applications [3] thanks to high quality passive components, transparency for NIR and visible wavelengths and their compatibility with CMOS process technology. Unfortunately, no native light sources are available for Si3N4 platforms and the integration of active materials, i.e. III-V compounds,...
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