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Ga-polarity GaN thin films were grown on sapphire (0001) substrates by rf-plasma assisted molecular beam epitaxy (MBE) using a double buffer layer, which consisted of an intermediate-temperature GaN buffer layer (ITBL) grown at 690 o C and a conventional AlN buffer layer deposited at 740 o C. Raman scattering spectra showed that the E 2 (high) mode of GaN film grown on conventional...
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