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Here, the hydrogen evolution reaction (HER) activities at the edge and basal‐plane sites of monolayer molybdenum disulfide (MoS2) synthesized by chemical vapor deposition (CVD) are studied using a local probe method enabled by selected‐area lithography. Reaction windows are opened by e‐beam lithography at sites of interest on poly(methyl methacrylate) (PMMA)‐covered monolayer MoS2 triangles. The HER...
2D semiconductors are promising channel materials for field‐effect transistors (FETs) with potentially strong immunity to short‐channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS2. FETs with channel lengths scaling down to ≈4 nm can be realized reliably. These graphene‐contacted ultrashort channel MoS...
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