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The effects of doping and buffer layers on the structure and electrical properties of Pb(Zr,Ti)O 3 (PZT) thin films on Pt/TiO 2 /SiO 2 /Si substrate derived from inorganic zirconium precursor have been studied. Ta doping optimizes the structure texture and reduces the leakage current of PZT films, whereas Ce-doped films have large amount of pyrochlor phase formed and a large...
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