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An anodic oxide film of InP, which had an interface state density of ? 1011 cm?2 eV?1 near midgap and worked well as the gate insulator for InP MOSFETs, was obtained by optimising its preparation conditions. The excellence of the anodic oxide as a gate insulator was confirmed by a high electron effective mobility (1500 cm2/Vs) in the accumulation-mode InP MOSFETs.
The letter describes advantages of low-temperature (~77 K) operation for InP MOSFETs using an anodic oxide of InP as the gate insulator. By cooling the device to about 100 K, the electron effective mobility in the device is increased by 5?8 times that at room temperature. Moreover, an increasing drift of drain current observed at room temperature disappears completely.
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