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Epitaxial SrTiO 3 (STO) films have been grown on TiN buffered Si(001) by pulsed laser deposition. The TiN layer was in situ deposited at 540, 640 or 720 o C whereas the STO film was grown at a fixed temperature of 640 o C. We have studied the effect of the growth temperature of TiN on the epitaxial relationship of STO/TiN heterostructures. It is found that for TiN grown at...
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