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GaInP ridge structures with ridge-top facet widths in the sub-wavelength region (0.5–0.6μm) and aligned along the [110] direction were successfully fabricated by selective-area metalorganic vapor phase epitaxy on (001) GaAs substrates using SiO 2 stripes as a mask. An X-ray diffraction study confirmed that the lattice mismatch of GaInP grown on both the (001) flat and (111)B sidewall facets...
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