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Nanocrystalline Si-rich silicon oxide films were deposited using plasma enhanced chemical vapor deposition technique with the mixture of silane (SiH 4 ), nitrous oxide (N 2 O) and hydrogen (H 2 ) as gas source on quartz glass substrate at the substrate temperature of 300 °C. The effect of the ratio N 2 O/SiH 4 on the oxidation, microstructures and photoluminescence...
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