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This paper presents the advanced I/O device design for 32 nm Hi-K Metal Gate technology with multi-high operation voltages. Process optimization work is done on the I/O composite gate dielectric stack to improve TDDB Vmax. By using advanced junction engineering, 3.3 V device Isubmax is reduce by 30-40% without Ion degradation based on TCAD simulation guideline. At the same time, 2.5 V device drive...
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