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The transport properties of back-gated graphene field effect transistors (GFETs) can be tuned via chemical doping. In this study, we report alteration of charge transport properties of GFET via 5-(4-hydroxyphenyl)-10,15,20-tri-(p-tolyl) zinc(II) porphyrin (Zn(II)-TTPOH) and its free base counterpart. We propose that, the porphyrin induces p - type doping in graphene.
The pure Pd and Pd alloy gated metal-insulator-semiconductor (MIS) hydrogen sensors have been studied. The chemical state of palladium in Pd and Pd alloy gated devices is similar and Pd alloy devices show a wide dynamic range. According to the hydrogen induced capacitance-voltage ( CV) shift and the response from a refreshed sensor, a new sensing mechanism is proposed that the hydrogen response is...
In this paper, we report the first results on DNA based thin film field effect transistors (TFFET). The DNA molecules are extracted from Salmon's milt and roe sacs and purified to 96%. DNA based thin films are obtained using different techniques including spin coating, molecular beam deposition (MBD), pulse laser deposition (PLD)...etc. An increase in the overall charge carrier mobility was achieved...
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