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A novel self-aligned (SA) graphene FET (GFET) with small access resistance is fabricated. Only one photolithography is needed to define the gate and high gate capacitive efficiency is obtained using a metal gate-stack. In addition, damages to graphene resulting from the plasma are avoided. The cap metal layer is used as an etch stop layer and the etched stem metal layer is used as a support layer,...
An innovated simple fabrication process is adopted to fabricate a novel gate self-aligned (GSA) graphene field effect transistor (GFET). First, stacked source/drain electrodes with triple-layer metal are formed. Then, after slightly etching of the second metal layer, laterally recessed profiles are formed, which leads to the self-aligned (SA) gate. A noticeable feature of the GSA-GFET is that the...
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