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Photoquenching of EL2 in semi-insulating GaAs and its thermal recovery from a metastable state at room temperature have been analyzed numerically and investigated experimentally by light diffraction on transient grating technique. The rate of thermal recovery at 300 K, r=(1-2)x10 6 s -1 , has been determined from the decay of spatially photoquenched EL2 structure.
We investigate numerically the nonequilibrium dynamics of carriers and internal space charge field during the photoquenching of metastable defect EL2 by short pulse of light interference field. Simulation of free carrier, photorefractive, and absorptive optical nonlinearities at various illumination intensities allowed us to reveal conditions for the efficient transient quenching of EL2 at room temperature...
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