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Nitrogen-ion-implantation damage on SiC has been clearly imaged using scanning internal photoemission microscopy (SIPM). Ni Schottky contacts were formed on selectively N-ion-implanted n-SiC surfaces at 80keV with an ion dose of 1×1015cm−2. A photocurrent, Y (photoyield; defined as photocurrent per incident photon), was detected by focusing and scanning a laser beam over the contacts. The N-ion-implanted...
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