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A new type of thermal-isolation structure based on polyimide (PI) and oxidized porous silicon (OPS) is presented. The structure has the advantage of simpler process, lower cost, and higher yield. The mechanism is described briefly in this paper and the process is studied in detail. The thermal-isolation capability of the structure is verified by a-Si bolometer with PI and OPS complex thermal isolation...
New application of polyimide (PI) is introduced in this paper. PI film of 27μm is achieved, and the excellent thermal-isolation performance of the film is simulated by ANSYS. The surface of film is flat, which is suitable for the fabrication of other materials such as aluminum and silicon nitride. The PI film is used as thermal-isolation layer of uncooled a-Si thin film transistor infrared sensors...
This paper reports the theory, fabrication and testing of a novel uncooled infrared (IR) sensor using amorphous silicon thin film transistors (a-Si TFTs) as the active elements. The measured temperature coefficient of the channel current (TCC) of the a-Si TFT is about 4.18%/K at room temperature. What's more, finger-cross TFT is designed, which can greatly improve the detectivity of uncooled infrared...
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