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High crystal quality ultrathin Ge and Ge0.96Sn0.04 channels are epitaxially grown on SOI and Si bulk, respectively, and high mobility pMOSFETs are fabricated. Low-temperature Si2H6 passivation of Ge and GeSn is utilized to form a high quality SiO2/Si interfacial layer between the high-κ dielectric and channels, leading to a substantial reduction of Dit. Ge and GeSn pMOSFETs achieve the improved μeff...
Ultrathin GeSn channels were epitaxially grown on Si(111) and (001) substrates using solid source molecular beam epitaxy. Well-behaved GeSn quantum well (QW) pTFETs and pMOSFETs were fabricated on Si. GeSn QW pMOSFETs on Si(111) demonstrate a high effective hole mobility of 505 cm2/Vs, indicating the high crystallinity of the GeSn material. GeSn QW pTFETs on Si(111) outperform the devices on Si(001)...
We demonstrate high performance undoped Ge0.92Sn0.08 quantum well (QW) pMOSFETs with in situ Si2H6 passivation on (001), (011) and (111) orientations. (011) and (111)-oriented Ge0.92Sn0.08 QW pFETs achieve higher on-state current ION and effective hole mobility μeff compared to (001) devices. Ge0.92Sn0.08 (111) QW pFETs demonstrate a record high μeff of 845 cm2V−1s−1 for GeSn p-channel devices (Fig...
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