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In this study, InGaP/GaAs solar cells fabricated by a sub-wavelength surface texture process are presented. The characteristics of the InGaP/GaAs solar cells with and without the sub-wavelength surface texture are studied. The conversion efficiency measured under one-sun air mass 1.5 global illumination at room temperature can also be improved from 10.8%. The simulated result of the sub-wavelength...
We report the recent progress of GaN-based VCSELs with a hybrid cavity structure comprised an epitaxial AlN/GaN DBR with superlattice insertion layers, an InGaN/GaN MQW active region and a top dielectric DBR. The lasers achieved laser action under optical pumping at the room temperature with a narrow linewidth. The preliminary results of the electrically pumped VCSEL will also be presented.
AlGalnP-based visible 650-nm GalnP-AlGalnP resonant-cavity light-emitting diodes (RCLEDs) with high-temperature stability were fabricated by wafer-bonding techniques on Si substrates. In this study, the metal-bonding RCLEDs (MBRCLEDs) devices were designed with 84-mum apertures for light output. The MBRCLEDs with a maximum wall-plug efficiency of 13.7% were demonstrated at an injection current of...
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