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The displacement of oxygen lattices in Ge ion-implanted ZnO bulk single crystals is studied by nuclear reaction analysis (NAR), photoluminescence (PL), and Van der Pauw methods. The Ge ion-implantation (net concentration: 2.6×10 20 cm −3 ) into ZnO is performed using a multiple-step energy. The high resistivity of ∼10 3 Ωcm in un-implanted samples remarkably decreased to ∼10...
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