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While Heusler-type Ni2MnGa exhibits both ferromagnetic and martensitic phase transitions at 380 K and 220 K, respectively, Ni2MnAl with the L21 structure shows only a ferromagnetic ordering near room temperatures. In this work, we alloyed both compounds with different Al/Ga ratio to study the interplay between martensitic and magnetic phase transitions of Ni2MnGa1−xAlx. Results indicate that both...
We report a study of the superconducting rhenium-based borides Mo7Re13B and W7Re13B by means of the 11B nuclear magnetic resonance (NMR) spectroscopy. Superconducting behavior with transition temperatures of 8.3 K and 7 K for Mo7Re13B and W7Re13B respectively have been reported. In the present work, NMR results indicate that the B Fermi level density of states is not predominated by p bands and the...
This study mainly used Electrospraying and Taguchi method to investigate the optimum process of piezoelectric Zinc oxide (ZnO) nanorods parameters. Zinc oxide seed layer was electrosprayed on Au/Chromium/Silicon substrates. The electric field is around 660 V/mm. In this study, ZnO was made in an array to characterize. We used X-ray diffraction (XRD), photoluminescence (PL) and field emission scanning...
Ta/Ta2O5 RRAMs show self-compliant characteristics in some Ta or Ta2O5 thickness range but Ti/TaOx RRAMs always need current compliance due to totally consumption of SC conduction layer.
Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in...
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