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This paper presents a Ku-Band low-noise amplifier using 0.35-µm SiGe BiCMOS technology. An inductively degenerated common-source topology combined with floating-body transistors are used to improve the noise figure of the LNA. The simulation results show that this 3-stage LNA achieves 3.2 dB minimum noise figure and 18.5 dB power gain over 12–18 GHz. An output P1dB of 8.6 dBm is obtained at 15 GHz...
This letter presents a low-power low-phase-noise VCO with self-adjusted active resistor (SAAR). A pair of PMOS transistors is introduced between cross-coupled pairs and LC-tank, serving as the SAAR. When cross-coupled transistor resides in the saturation region, SAAR exhibits small resistance, enabling fast switching and suppressing flicker noise up-conversion to $1/f^{3}$ phase noise. Moreover,...
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