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We report on 2D numerical simulations of photoresponse characteristic for long-wavelength HgCdTe infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated. Optimal thickness of absorption layers at different absorption lengths and diffusion lengths are extracted numerically. An empirical formula is proposed to predict reasonable optimal thickness of...
We report on 2D simulations of dark current for InP/In0.53Ga0.47aAs/InP p-i-n photodiode. Our simulation result is in good agreement with experiment confirming that generation-recombination effect is the dominant source of the dark current at low bias. Effects of the thickness and doping concentration of the absorption layer on the dark current are discussed in detail.
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