The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrate a correlation between the microstructure of epilayers and the diffusion length of free carriers and excitons in heteroepitaxial and homoepitaxial GaN films. We show that the diffusion length is shorter than predicted for a given density of dislocations. With improving structural quality of the films and lower dislocation density the diffusion lengths of free carriers and excitons increase,...
We report the results of room-temperature cathodoluminescence (CL) and of scanning CL and electron (SEM) microscopy of GaN/InGaN structure with a single InGaN quantum well on top. The structures were grown by MOCVD on sapphire with low-temperature (LT) GaN buffer. Depth-profiling CL investigations were used to identify the observed CL emissions, which show a complicated in-depth evolution. The influence...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.