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We present a method for monolithically integrating mismatched semiconductor materials with Si, coined three-dimensional (3D) heteroepitaxy. The method comprises the replacement of conventional, continuous epilayers by dense arrays of strain- and defect-free, micron-sized crystals. The crystals are formed by a combination of deep-patterning of the Si substrates and self-limited lateral expansion during...
Monolithic integration of absorber layer and readout electronics is expected to greatly improve spatial resolution and sensitivity of X‐ray imaging detectors. It requires, however, heteroepitaxial growth of thick, lattice, and thermally mismatched absorber layers on a Si substrate. Wafer bowing and layer cracks induced by temperature changes have so far appeared to be insurmountable obstacles in the...
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