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We develop a new chemical cleaning method for crystalline silicon (c-Si), which is perfectly suitable for surface passivation by Cat-CVD SiNx/a-Si stacked layers to satisfy the most essential factors for fabrication of high efficient c-Si solar cells. Cat-CVD passivation realizes extremely low surface recombination velocity (SRV) lower than 0.2 cm/s. A sufficient resistance to chemical process is...
In this paper, we proposed a novel surface cleaning and nitridation technology of compound semiconductors using gas-decomposition reactions in a catalytic chemical vapor deposition (Cat-CVD) system. An NH, gas was used for the surface modification of GaAs(100). X-ray photoelectron spectroscopy measurements revealed that, (1) oxygen related peaks vanished by a 3 min-nitridation treatment at 150 °C,...
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