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In the catalytic chemical vapor deposition (Cat-CVD) method, a heated metal wire is often used as the catalyzer to crack the process gas molecules. Therefore, the temperature of the wafer near the catalyzer is influenced by heat from the catalyzer. Thus, a special technique is needed to control the wafer temperature. We examined this matter from the viewpoint of the apparatus. The electrostatic chuck...
The guiding principles for obtaining device-grade hydrogenated amorphous silicon (a-Si:H) films with high deposition rate on large-area substrates by catalytic chemical vapor deposition (Cat-CVD) are presented. The most important points are controlling both the heat flow and the atomic H. Other points of note are the suppression of silicide formation on the catalyzer and control of the gas flow. Solar...
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