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Light emitting diodes (LEDs) hold the promise for efficient, lightweight and environmental-friendly lighting sources, which is regarded as the next-generation lighting technology. Since so many problems still remain to be solved, this emerging technology has attracted the attention of a large number of researchers. Among several issues frequently discussed in the community, the long-time reliability...
The three-dimensional (3D) light-emitting diodes (LEDs) integration package based on silicon with through silicon vias (TSV) attracts a lot of attention because of a better performance, lighter package, and higher integration density. Two main kinds of LED chip including conventional chip (CC) and vertical chip (VC) encapsulated in silicon platform with and without a reflector cup are analyzed through...
A thin film GaN-based LEDs has been fabricated on a silicon substrate with periodic via holes formed by a laser drilling process. GaN-based LEDs grown on sapphire substrate are successfully bonded and transferred onto Si substrate with periodic via holes using Au-Sn wafer bonding followed by grinding, chemical mechanical polishing (CMP) and dry etching. The bonding medium comprises Au-Sn multilayer...
GaN thin film grown on sapphire substrate of 50 mm*50 mm in size are successfully bonded and transferred onto Si substrate using Au-Sn wafer bonding followed by grinding, chemical mechanical polishing (CMP) and dry etching. The GaN/sapphire structures are integrated to receptor Si substrate by thermal pressure bonding process. The bonding medium comprises Au-Sn multilayer composite deposited directly...
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